Selective epitaxy of cadmium telluride on silicon by MBE

Authors: Sporken, R.; Grajewski, D.; Xin, Y.; Wiame, F.; Brill, G.; Boieriu, P.; Prociuk, A.; Rujirawat, S.; Dhar, N.; Sivananthan, S.

Source: Journal of Electronic Materials, Volume 29, Number 6, June 2000 , pp. 760-764(5)

Publisher: Springer

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Abstract:

CdTe <EquationSource Format="TEX"><![CDATA[ $$(bar 1bar 1bar 1)$$ ]]></EquationSource> B was grown on As-terminated Si(111) by molecular beam epitaxy (MBE). Nucleation and interface properties were studied by photoelectron spectroscopy, scanning tunneling microscopy, electron diffraction, and energy-dispersive spectroscopy of x-rays. Selective growth on Si(111) was investigated either by using SiO₂ as a mask, or by growing on a patterned CdTe seed layer. The highest temperature where CdTe nucleates on As-terminated Si(111) surfaces is typically in the range of 220-250°C. On a SiO₂ mask, CdTe nucleates at the same temperatures, leading to polycrystalline growth. However, homoepitaxy of CdTe is possible around 300°C. Hence, CdTe can be grown selectively on a patterned CdTe seed layer on Si(111). This is confirmed by scanning electron microscopy and scanning Auger microscopy.

Keywords: Molecular beam epitaxy; cadmium telluride; silicon; selective growth; heteroepitaxy

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-000-0221-2

Affiliations: 1: Email: sporken@uic.edu

Publication date: 2000-06-01