STM probe-assisted site-control of self-organized InAs quantum dots on GaAs surfaces
Authors: Kohmoto, Shigeru; Nakamura, Hitoshi; Ishikawa, Tomonori; Asakawa, Kiyoshi
Source: Journal of Electronic Materials, Volume 29, Number 5, May 2000 , pp. 525-529(5)
Abstract:A site-control technique for individual InAs quantum dots (QDs) has been developed by using scanning tunneling microscope (STM) probe-assisted nanolithography and self-organizing molecular-beam epitaxy. We find that nano-scale deposits can be created on a GaAs surface by applying voltage and current pulses between the surface and a tungsten tip of the STM, and that they act as “nano-masks” on which GaAs does not grow directly. Accordingly, subsequent thin GaAs growth produces GaAs nano-holes above the deposits. When InAs is supplied on this surface, QDs are self-organized at the hole sites, while hardly any undesirable Stranski-Krastanov QDs are formed in the flat surface region. Using this technique with nanometer precision, a QD pair with 45-nm pitch is successfully fabricated.
Document Type: Research Article
Affiliations: Email: firstname.lastname@example.org
Publication date: 2000-05-01