Journal of Electronic Materials

Electrical characterization of ultrathin oxides of silicon grown by N₂O plasma assisted oxidation
pp. 399-404(6)
Authors: Bhat, V.; Bhat, K.; Subrahmanyam, A.

Interfacial reactions between liquid indium and Au-deposited substrates
pp. 405-410(6)
Authors: Liu, Y.; Chuang, T.

Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD
pp. 411-417(7)
Authors: Xie, Z.; Wei, C.; Chen, S.; Jiang, S.; Edgar, J.

Effect of oxygen on the properties of encapsulated polycrystalline CdSe films
pp. 418-425(8)
Authors: Lee, M.; Langford, R.; Wright, S.; Judge, C.; Chater, R.

Oxygen-related deep levels in Al_0.5In_0.5P grown by MOVPE
pp. 426-429(4)
Authors: Cederberg, J.; Bieg, B.; Huang, J.; Stockman, S.; Peanasky, M.; Kuech, T.

Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy
pp. 430-435(6)
Authors: Gurskii, A.; Hamadeh, H.; Körfer, H.; Yablonskii, G.; Zelenkovskii, V.; Bezjazychnaja, T.; Heuken, M.; Heime, K.

Characterizing the layer properties of AlGaAs/GaAs heteroface solar cell structures by specular spectral reflectance
pp. 436-442(7)
Author: Algora, Carlos

Die bonding with Au/In isothermal solidification technique
pp. 443-447(5)
Authors: Wang, T.; Shen, Z.; Ye, R.; Xie, X.; Stubhan, F.; Freytag, J.

Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes
pp. 448-451(4)
Authors: Fang, Z.; Reynolds, D.; Look, D.

MOCVD growth of GaBN on 6H-SiC (0001) substrates
pp. 452-456(5)
Authors: Wei, C.; Xie, Z.; Edgar, J.; Zeng, K.; Lin, J.; Jiang, H.; Chaudhuri, J.; Ignatiev, C.; Braski, D.

Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire
pp. 457-462(6)
Authors: Zhi, D.; Tisch, U.; Zamir, S.; Wei, M.; Zolotoyabko, E.; Salzman, J.

XPS and ellipsometric characterization of zinc-BTA complex
pp. 463-467(5)
Authors: Sirtori, V.; Zambon, F.; Lombardi, L.

MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy
pp. 468-472(5)
Authors: Haberland, K.; Bhattacharya, A.; Zorn, M.; Weyers, M.; Zettler, J.; Richter, W.