Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing
Authors: Kuriyama, K.; Ushiyama, K.; Tsunoda, T.; Uchida, M.; Yokoyama, K.
Source: Journal of Electronic Materials, Volume 27, Number 5, May 1998 , pp. 462-465(4)
Abstract:The uniformity of deep levels in semi-insulating InP wafers, which have been obtained by multiple-step wafer annealing under phosphorus vapor pressure, was studied using the thermally stimulated current (TSC) and photoluminescence (PL) methods. Only three traps related to Fe, T0 (ionization energy Ei=0.19 eV), T1 (0.25 eV), and T2 (0.33 eV), probably forming complex defects, were observed in the wafer and they exhibited a relatively uniform distribution. PL spectra relating to phosphorus vacancies observed in some regions of the wafer are correlated with a small TSC signal having an ionization energy of 0.43 eV.
Document Type: Research Article
Publication date: 1998-05-01