Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions

Authors: Henning, J.; Schoen, K.; Melloch, M.; Woodall, J.; Cooper, J.

Source: Journal of Electronic Materials, Volume 27, Number 4, April 1998 , pp. 296-299(4)

Publisher: Springer

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This paper presents a study of the rectifying properties of heavily doped polycrystalline silicon (polysilicon) on 4H silicon carbide (4H-SiC). Current properties and barrier heights were found using analysis of the heterojunction. This revealed that Schottky analysis would be valid for the large barrier height devices. Isotype and an-isotype devices were fabricated on both p-type and n-type SiC and the electrical characteristics were investigated using capacitance vs voltage measurements, current vs voltage measurements (I-V), and temperature I-V measurements. Extraction of the barrier height, built-in potential, and Richardson constant were made and then compared to theoretical values for the heterojunction. Temperature I-V measurements demonstrated that the current transport mechanism is thermionic emission, confirming the validity of the Schottky diode model. The I-V characteristics show near ideal diode rectifying behavior and the capacitance-voltage characteristics show ideal junction space charge modulation for all polysilicon/SiC combinations. These experimental results match well with heterojunction band-offset estimated barrier heights and demonstrate that the barrier height of the polysilicon/4H SiC interface may be controlled by varying the polysilicon doping type.

Keywords: Heterojunction diode; Schottky diode; silicon carbide

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-998-0403-x

Publication date: April 1, 1998

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