Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Authors: Nam, Ok-Hyun; Zheleva, Tsvetanka; Bremser, Michael; Davis, Robert

Source: Journal of Electronic Materials, Volume 27, Number 4, April 1998 , pp. 233-237(5)

Publisher: Springer

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Lateral epitaxial growth and coalescence of GaN regions over SiO2 masks previously deposited on GaN/AlN/6H-SiC(0001) substrates and containing 3 µm wide rectangular windows spaced 7 µm apart have been achieved. The extent and microstructural characteristics of these regions of lateral overgrowth were a complex function of stripe orientation, growth temperature, and triethylgallium (TEG) flow rate. The most successful growths were obtained from stripes oriented along 〈1 $$ ]]> 00〉 at 1100°C and a TEG flow rate of 26 µmol/min. A density of ∼109 cm−2 threading dislocations, originating from the underlying GaN/AlN interface, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The surfaces of the coalesced layers had a terrace structure and an average root mean square roughness of 0.26 nm.
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