P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition
Authors: Eiting, C.; Grudowski, P.; Dupuis, R.
Source: Journal of Electronic Materials, Volume 27, Number 4, April 1998 , pp. 206-209(4)
Abstract:Mg- and Si-doped GaN and AlGaN films were grown by metalorganic chemical vapor deposition and characterized by room-temperature photoluminescence and Hall-effect measurements. We show that the p-type carrier concentration resulting from Mg incorporation in GaN:Mg films exhibits a nonlinear dependence both on growth temperature and growth pressure. For GaN and AlGaN, n-type doping due to Si incorporation was found to be a linear function of the silane molar flow. Mg-doped GaN layers with 300K hole concentrations p ∼2×1018 cm−3 and Si-doped GaN films with electron concentrations n∼1×1019 cm−3 have been grown. N-type Al0.10Ga0.90N:Si films with resistivities as low as p ∼6.6×10−3 Ω-cm have been measured.
Document Type: Research Article
Publication date: April 1, 1998