Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate
Authors: Fan, J.; Tsai, C.; Chen, K.; Wang, S.; Lin, Gray; Lee, C.
Source: Journal of Electronic Materials, Volume 27, Number 3, March 1998 , pp. 110-113(4)
Abstract:Low-resistance ohmic conduction across an epitaxially lifted-off (ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. The ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.
Document Type: Research Article
Publication date: March 1, 1998