Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate

Authors: Fan, J.; Tsai, C.; Chen, K.; Wang, S.; Lin, Gray; Lee, C.

Source: Journal of Electronic Materials, Volume 27, Number 3, March 1998 , pp. 110-113(4)

Publisher: Springer

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Low-resistance ohmic conduction across an epitaxially lifted-off (ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. The ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.

Keywords: Epitaxial lift-off (ELO) method; laser diode; n-type GaAs

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-998-0199-8

Publication date: March 1, 1998

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