ZnSe heteroepitaxy on GaAs (110) substrate

Authors: Cho, M.; Koh, K.; Bagnall, D.; Zhu, Z.; Yao, T.

Source: Journal of Electronic Materials, Volume 27, Number 2, February 1998 , pp. 85-88(4)

Publisher: Springer

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ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pre-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of (110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 107/cm2, 3 × 105/cm2 and 5 × 104/cm2, respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.

Keywords: Etch pit density (EPD); GaAs (110); ZnSe; molecular beam epitaxy (MBE)

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-998-0194-0

Publication date: February 1, 1998

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