Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

Authors: Uchida, M.; Kainosho, K.; Ohta, M.; Oda, O.

Source: Journal of Electronic Materials, Volume 27, Number 1, December 1998 , pp. 10-13(4)

Publisher: Springer

Buy & download fulltext article:


Price: $47.00 plus tax (Refund Policy)


Recently, it was found that undoped semi-insulating InP can be reproducibly obtained by wafer annealing at 950°C for 40 h under phosphorus vapor pressure of 1 atm. Resistivity variation across the 50 mm diameter wafer after this annealing process, however, was in the range of 22.5–53.7%. In order to realize the fabrication of undoped semi-insulating (SI) InP with uniform electrical properties, multiple-step wafer annealing (MWA) procedure has been applied for the first time. It was found that two-step wafer annealing at 950°C for 40 h under phosphorus vapor pressure of 1 atm and at 807°C for 40 h under phosphorus vapor pressure ranging from 30 to 50 atm, was effective in improvement of the uniformity of the electrical properties of undoped SI InP. By the present MWA, the resistivity variation of 8–12% and the mobility variation of 2–4% could be obtained for 50 mm diameter wafers.

Keywords: InP; semi-insulating; wafer annealing

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-998-0329-3

Publication date: December 1, 1998

Related content


Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page