Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs

Authors: Fang, Z.; Look, D.; Jones, R.

Source: Journal of Electronic Materials, Volume 26, Number 12, December 1997 , pp. L29-L31(3)

Publisher: Springer

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Abstract:

In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T_a at 170K is sometimes observed. The activation energy and capture cross section of T_a are 0.43 eV and 3.7×10⁻¹⁵ cm², respectively. Based on a good correlation with the Cu-related photoluminescence emission at 1.36 eV and the Cu-related deep level transient spectroscopy hole traps HL4 and HB4, we argue that T_a is a Cu-related hole trap.

Keywords: 4.2K photoluminescence; Cu-related trap; semi-insulating GaAs; thermally stimulated current spectroscopy

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-997-0064-1

Publication date: 1997-12-01