Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs
Authors: Fang, Z.; Look, D.; Jones, R.
Source: Journal of Electronic Materials, Volume 26, Number 12, December 1997 , pp. L29-L31(3)
Abstract:In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap Ta at 170K is sometimes observed. The activation energy and capture cross section of Ta are 0.43 eV and 3.7×10−15 cm2, respectively. Based on a good correlation with the Cu-related photoluminescence emission at 1.36 eV and the Cu-related deep level transient spectroscopy hole traps HL4 and HB4, we argue that Ta is a Cu-related hole trap.
Document Type: Research Article
Publication date: December 1, 1997