Authors: Kuo, H.; Kuo, J.; Wang, Y.; Lin, C.; Chen, H.; Stillman, G.

Source: Journal of Electronic Materials, Volume 26, Number 8, August 1997 , pp. 944-948(5)

Publisher: Springer

Abstract:

We report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncertainty related to the intermixing layer at heterointerfaces, the residual group-V source evacuation time was optimized for abrupt GalnP/GaAs (AlInP/GaAs) interfaces. Based upon thickness and composition values determined by double-crystal x-ray diffraction simulation and cross-sectional transmission electron microscopy, the transition energies of GalnP/GaAs and AlInP/GaAs quantum wells were calculated using a three-band Kane model with varying band-offset ratios. The best fit of measured data to calculated transition energies suggests that the valence-band offset ratio (γ band discontinuity) was 0.63 ± 0.05 for GalnP/GaAs and 0.54 ± 0.05 for AlInP/GaAs heterostructures. This result showed good agreement with photoluminescence data, indicating that the value is independent of temperature.

Keywords: AlInP/GaAs; band offset; GalnP/GaAs; gas source molecular beam epitaxy (GSMBE); photoluminescence (PL); photoluminescence excitation (PLE); three-band Kane

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-997-0279-1

Publication date: 1997-08-01

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