Gas source molecular beam epitaxy growth of SrS:Ce for flat panel displays
Authors: Tong, W.; Yang, T.; Park, W.; Chaichimansour, M.; Schön, S.; Wagner, B.; Summers, C.
Source: Journal of Electronic Materials, Volume 26, Number 6, June 1997 , pp. 728-731(4)
Abstract:SrS:Ce thin films have been grown by gas source molecular beam epitaxy (GSMBE). The growth conditions have been systematically investigated as a function of growth temperature, sulfur to strontium flux ratio, and cerium flux. Single crystal SrS and high quality SrS:Ce were successfully grown on GaAs and glass substrates, respectively, without post-annealing process at temperature as low as 600°C. It was found that the electroluminescence (EL) performance was greatly improved by addition of ZnS during the growth.
Document Type: Research Article
Publication date: June 1, 1997