Device modeling of HgCdTe vertically integrated photodiodes
Authors: Mao, D.; Robinson, H.; Bartholomew, D.; Helms, C.
Source: Journal of Electronic Materials, Volume 26, Number 6, June 1997 , pp. 678-682(5)
Abstract:Simulations of current-voltage characteristics of ion-implanted n-on-p photodiodes have been performed using SemiCad Device. In order to accurately simulate this device structure, several modifications to the simulator were implemented. These include the modified carrier statistics to account for the nonparabolic band structure of HgCdTe, the correct physics parameters for Shockley-Read-Hall, optical, and Auger recombination, and the Burstein-Moss shift for optical absorption important for heavily doped n-type HgCdTe. With these and other improvements, SemiCad Device is calibrated with the measured ideal dark current of an ion implanted diode and is used to simulate a source of non-ideal dark current from surface-charge induced band-to-band tunneling.
Document Type: Research Article
Publication date: June 1, 1997