Characterization of CdTe/Hg1−xCdxTe heterostructures by high-resolution x-ray diffraction
Authors: Mainzer, N.; Shilo, D.; Zolotoyabko, E.; Bahir, G.; Sher, A.
Source: Journal of Electronic Materials, Volume 26, Number 6, June 1997 , pp. 606-609(4)
Abstract:CdTe/Hg1−xCdxTe heterostructures variously heat-treated and implanted with boron were studied by means of high-resolution x-ray diffraction. A novel procedure for simulating diffraction spectra was developed, which is based on direct summation of scattered waves across a heterostructure. In that routine, short-range variations of structural parameters, including concentration of the components, can be taken into account. The new approach allows precise characterization of II–VI heterostructures, because it correctly treats atomic diffusion effects in diffraction spectra. As a result, subtle spectral modifications induced by boron implantation could be detected and were attributed to the dynamics of post implantation point defects.
Document Type: Research Article
Publication date: June 1, 1997