Free electron laser annealing of silocon carbibe
Authors: Ohyama, Hideaki; Suzuki, Toshiji; Nishi, Kazuhisa; Mitsuyu, Tsuneo; Tomimasu, Takio
Source: Journal of Electronic Materials, Volume 26, Number 3, March 1997 , pp. 183-186(4)
Abstract:We have applied a free electron laser (FEL) to crystallize amorphous silicon carbide (a-SiC) and to remove the damage and activate the dopant of a damaged layer of nitrogen implanted cubic silicon carbide (3C-SiC) films at room temperature. The FEL has two main characteristics, wavelength tunability and ultrashort-pulse operation (~10 ps) with intense peak power (~MW). The wave-length was selected at the energy of the Si-C stretch mode in order to excite the lattice vibration directly. We observed the crystallization of a-SiC occurs at room temperature when irradiation with a 12.6 µm FEL. The present results indicate that FEL annealing (12.6 µm: transverse optical mode, 10.3 µm: longitudinal optical mode) is effective for recrystallization and activation of an ion-implanted SiC films.
Document Type: Research Article
Publication date: 1997-03-01