Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface
Authors: Hatayama, Tomoaki; Tanaka, Norihiro; Fuyuki, Takashi; Matsunami, Hiroyuki
Source: Journal of Electronic Materials, Volume 26, Number 3, March 1997 , pp. 160-164(5)
Abstract:An interface modification by hydrocarbon radicals from cracked-propane (C3H8) and dimethylgermane ((CH3)2GeH2:DMGe) in heteroepitaxy of 3C-SiC on Si has been studied with in situ reflection high-energy electron diffraction (RHEED) and a high-resolution scanning electron microscope. In the case of cracked-C3H8, a clean Si surface is carbonized at 750°C. Whereas, in the case of DMGe, it can be carbonized reproducibly at as low as 650°C. A RHEED pattern of a carbonized layer prepared using DMGe indicates single-crystalline 3C-SiC without twins and Ge-related patterns. The activation energy in the range of 46.9-51.1 kcal/ mol is obtained in the initial stage of 3C-SiC growth for both hydrocarbon sources. The difference in 3C-SiC growth by using different hydrocarbon sources is discussed in detail.
Document Type: Research Article
Publication date: 1997-03-01