Doping of 3C-SiC by implantation of nitrogen at high temperatures
Authors: Lossy, R.; Reichert, W.; Obermeier, E.; Skorupa, W.
Source: Journal of Electronic Materials, Volume 26, Number 3, March 1997 , pp. 123-127(5)
Abstract:Doping profiles and electrical properties are investigated on SiC samples doped with single energy implants from nitrogen. The profiles are analyzed using Pearson distributions for different implantation energies and temperatures. Implantations are performed for temperatures up to 1200°C. Diffusion during high temperature implantation is investigated and the diffusion coefficients measured range from 1.09 × 10−15 to 1.53 × 10−14cm2/s depending on temperature. The activation energy for implantation enhanced diffusion is estimated to be 0.91 eV. A comparison is made with diffusion during annealing. The activated dopants from high temperature implantation are investigated by the Hall probe method, showing that activation and mobility increase with temperature.
Document Type: Research Article
Publication date: 1997-03-01