Hopping conduction in heavily doped bulk n-type SiC

Authors: Mitchel, W.; Evwaeaye, A.; Smith, S.; Roth, M.

Source: Journal of Electronic Materials, Volume 26, Number 3, March 1997 , pp. 113-118(6)

Publisher: Springer

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The electronic properties of heavily doped n-type 4H, 6H, and 15R SiC have been studied with temperature dependent Hall effect, resistivity measurements, and thermal admittance spectroscopy experiments. Hopping conduction was observed in the resistivity experiments for samples with electron concentrations of 1017 cm−3 or higher. Both band and hopping conduction were observed in all three polytypes in resistivity and Hall effect experiments. The hopping conduction activation energy ε3 obtained from the resistivity measurements varied from 0.003 to 0.013 eV. The ε3 value obtained from thermal admittance spectroscopy measurements were slightly lower. The nitrogen ionization levels were observed by thermal admittance spectroscopy only in those samples where hopping conduction was not detected by this experiment. Free carrier activation energy Ea for nitrogen was difficult to determine from temperature dependent Hall effect measurements because of the effects of hopping conduction. A new feature in the apparent carrier concentration vs inverse temperature data in the hopping regime was observed.

Keywords: Admittance spectroscopy; Hall effect; hopping conduction; silicon carbide

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-997-0135-3

Publication date: March 1, 1997

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