Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
Authors: Chui, H.; Biefeld, R.; Hammons, B.; Breiland, W.; Brennan, T.; Jones, E.; Moffat, H.; Kim, M.; Grodzinski, P.; Chang, K.; Lee, H.
Source: Journal of Electronic Materials, Volume 26, Number 1, December 1997 , pp. 37-42(6)
Abstract:We have performed an extensive study of GaAs, Al0.22Ga0.78As, and In0.16Ga0.84As grown using tertiarybutylarsine (TBA) in an ultra-high purity metalorganic chemical vapor deposition multi-wafer reactor. Key results include: high purity TBA AlGaAs layers with the lowest p-type carrier concentrations (4 × 1014 cm−3) reported to date; 4K photoluminescence bound exciton linewidths as narrow as 4.3 meV; C, O. Si, and S concentrations below the secondary ion mass spectrometry detection limit; and InGaAs/GaAs quantum wells with 20K PL linewidths as narrow as 3.5 meV. We also observe a strong dependence of growth rates and doping efficiency on group-V partial pressure, possibly due to a competition between excess group-V species and group-Ill or Si species for group-Ill surface sites. Finally, we demonstrate record uniformity using TBA with an AlGaAs thickness variation of only ±1.4% across a 4 inch wafer.
Document Type: Research Article
Publication date: 1997-12-01