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Volume 5, Number 4, December 2006

all issues

An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors
pp. 261-266(6)
Authors: Diyadi, J.; Hlou, L.; Amechnoue, K.; Moatadid, A.; Varani, L.; Palermo, C.; Millithaler, J.; Vaissière, J.; Nougier, J.

Super-resolution using neural networks based on the optimal recovery theory
pp. 275-281(7)
Authors: Huang, Yizhen; Long, Yangjing

pp. 283-283(1)
Authors: Kosina, Hans; Selberherr, Siegfried

The 3D nanometer device project nextnano: Concepts, methods, results
pp. 285-289(5)
Authors: Trellakis, Alex; Zibold, Tobias; Andlauer, Till; Birner, Stefan; Smith, R.; Morschl, Richard; Vogl, Peter

A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation
pp. 291-295(5)
Authors: Suvorov, Vasily; Hössinger, Andreas; Djurić, Zoran; Ljepojevic, Neboysha

A 3D moving grid algorithm for process simulation
pp. 297-300(4)
Authors: Strecker, N.; Richards, D.

Kinetic-energy transport equation for the modeling of ballistic MOSFETs
pp. 301-304(4)
Authors: Tang, Ting-Wei; Samra, Parmijit.

Power·delay product in COSMOS logic circuits
pp. 305-309(5)
Authors: Al-Ahmadi, Ahmad; Kaya, Savas

Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator
pp. 311-314(4)
Authors: Aldegunde, M.; García-Loureiro, A.; Kalna, K.; Asenov, A.

Simulation of piezoresistivity effect in FETs
pp. 323-326(4)
Authors: Auf der Maur, Matthias; Povolotskyi, Michael; Sacconi, Fabio; Di Carlo, Aldo

Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias
pp. 327-331(5)
Authors: Bentz, D.; Bloomfield, M.; Lu, J.-Q; Gutmann, R.; Cale, T.

Intrinsic parameter fluctuations due to random grain orientations in high- gate stacks
pp. 333-336(4)
Authors: Brown, Andrew; Watling, Jeremy; Asenov, Asen

An evolution algorithm for noise modeling of HEMT’s down to cryogenic temperatures
pp. 337-340(4)
Authors: Caddemi, Alina; Catalfamo, Francesco; Donato, Nicola

Transient TCAD simulation of three-stage organic ring oscillator
pp. 345-348(4)
Authors: Erlen, C.; Lugli, P.; Fiebig, M.; Schiefer, S.; Nickel, B.

A novel framework for distributing computations DisPyTE – distributing Python tasks environment
pp. 349-352(4)
Authors: Fühner, Tim; Popp, Stephan; Jung, Thomas

Efficient full-flow process simulation for 3D structures including stress modeling
pp. 353-356(4)
Authors: Gencer, Alp; Lebedev, Andrei; Pfäffli, Paul

Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs
pp. 357-360(4)
Authors: Ikarashi, H.; Kitamura, K.; Kurosawa, N.; Horio, K.

A drain current model for Schottky-barrier CNT-FETs
pp. 361-364(4)
Authors: Jiménez, David; Cartoixà, Xavier; Miranda, Enrique; Suñé, Jordi; Chaves, Ferney; Roche, Stephan

Accurate extraction of maximum current densities from the layout
pp. 381-384(4)
Authors: Seidl, Albert; Schnattinger, Thomas; Erdmann, Andreas; Hartmann, Hans; Petrashenko, Alexandr

Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator
pp. 385-388(4)
Authors: Seoane, N.; García-Loureiro, A.; Kalna, K.; Asenov, A.

Negative gate-overlap in nanoscaled DG-MOSFETs with asymmetric gate bias
pp. 389-392(4)
Authors: Shao, Xue; Yu, Zhiping

Human body model ESD simulation including self heating effect
pp. 393-395(3)
Authors: Takani, T.; Toyabe, T.

Quantum correction for DG MOSFETs
pp. 397-400(4)
Authors: Wagner, Martin; Karner, Markus; Cervenka, Johann; Vasicek, Martin; Kosina, Hans; Holzer, Stefan; Grasser, Tibor

Numerical analysis of a DAR IMPATT diode
pp. 401-404(4)
Authors: Zemliak, Alexander; Cabrera, Santiago

Particle-based simulation: An algorithmic perspective
pp. 405-410(6)
Authors: Saraniti, Marco; Aboud, Shela; Branlard, Julien; Goodnick, Stephen

A linear response Monte Carlo algorithm for inversion layers and magnetotransport
pp. 411-414(4)
Authors: Jungemann, Christoph; Pham, Anh-Tuan; Meinerzhagen, Bernd

Global Modeling of high frequency devices
pp. 415-418(4)
Authors: Ayubi-Moak, J.; Goodnick, S.; Saraniti, M.

Introducing energy broadening in semiclassical Monte Carlo simulations
pp. 419-423(5)
Authors: Ferrari, Giulio; Asenov, A.; Nedjalkov, M.; Jacoboni, C.

Joule heating and phonon transport in silicon MOSFETs
pp. 431-434(4)
Authors: Aksamija, Zlatan; Ravaioli, Umberto

Monte Carlo simulation of double gate MOSFET including multi sub-band description
pp. 439-442(4)
Authors: Saint-Martin, J.; Bournel, A.; Aubry-Fortuna, V.; Monsef, F.; Chassat, C.; Dollfus, P.

An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs
pp. 443-446(4)
Authors: Querlioz, Damien; Dollfus, Philippe; Do, Van-Nam; Bournel, Arnaud; Nguyen, Van

Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
pp. 447-450(4)
Authors: Sverdlov, Viktor; Grasser, Tibor; Kosina, Hans; Selberherr, Siegfried

Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon
pp. 451-454(4)
Authors: Akis, Richard; Ferry, David

Self-consistent ion transport simulation in carbon nanotube channels
pp. 455-457(3)
Authors: Eschermann, Jan; Li, Yan; Van der Straaten, Trudy; Ravaioli, Umberto

Meshless solution of the 3-D semiconductor Poisson equation
pp. 459-462(4)
Authors: Aksamija, Zlatan; Ravaioli, Umberto

On a simple and accurate quantum correction for Monte Carlo simulation
pp. 467-469(3)
Authors: Bufler, F.; Hudé, R.; Erlebach, A.

DSMC versus WENO-BTE: A double gate MOSFET example
pp. 471-474(4)
Authors: Cáceres, Maria; Carrillo, José; Gamba, Irene; Majorana, Armando; Shu, Chi-Wang

Wave-mixing effects on electronic noise in semiconductors
pp. 475-477(3)
Authors: Adorno, D.; Capizzo, M.; Zarcone, M.

Thermal noise in nanometric DG-MOSFET
pp. 479-482(4)
Authors: Dollfus, P.; Bournel, A.; Galdin-Retailleau, S.; Velázquez, J.

Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors
pp. 483-486(4)
Authors: Faralli, Nicolas; Markandeya, Himanshu; Branlard, Julien; Saraniti, Marco; Goodnick, Stephen; Ferry, David

Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
pp. 487-487(1)
Authors: Sverdlov, Viktor; Grasser, Tibor; Kosina, Hans; Selberherr, Siegfried

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