Journal of Computational Electronics

Editorial
pp. 451-451(1)
Author: Ferry D.K.

The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures
pp. 453-465(13)
Authors: Vasileska D.; Knezevic I.; Akis R.; Ahmed S.; Ferry D.K.

Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling
pp. 467-474(8)
Authors: Takeda H.; Mori N.; Hamaguchi C.

Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors
pp. 475-480(6)
Authors: Wigger S.; Saraniti M.; Goodnick S.; Leitenstorfer A.

A Landauer Approach to Nanoscale MOSFETs
pp. 481-489(9)
Authors: Lundstrom M.; Rhew J.-H.

Anisotropic Quantum Dots
pp. 491-501(11)
Authors: Wang J.B.; Hines C.

The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
pp. 503-513(11)
Authors: Asenov A.; Watling J.R.; Brown A.R.; Ferry D.K.

Molecular Conduction: Paradigms and Possibilities
pp. 515-525(11)
Authors: Ghosh A.W.; Datta S.