Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET

Authors: Huq, Hasina F.; Islam, Syed K.

Source: International Journal of Infrared and Millimeter Waves, Volume 26, Number 11, November 2005 , pp. 1501-1512(12)

Publisher: Springer

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The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent ability to operate at much higher temperature. An investigation of temperature model of a 1 m gate AlGaN/GaN enhancement mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures. The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain current (IDmax), the threshold voltage (Vth), the peak dc trans-conductance (gm), and unity current gain cut-off frequency (fT). The calculated values of fT (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest that the proposed device could survive in extreme environments.

Keywords: AlGaN/GaN; MODFET; two dimensional electron gas (2DEG); unity current gain cut-off frequency (fT)

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s10762-005-0027-7

Publication date: November 1, 2005

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