High Doping Density Schottky Diodes in the 3MM Wavelength Cryogenic Heterodyne Receiver

Authors: Piddyachiy, V. I.1; Shulga, V. M.2; Korolev, A. M.2; Myshenko, V. V.2

Source: International Journal of Infrared and Millimeter Waves, Volume 26, Number 9, September 2005 , pp. 1307-1315(9)

Publisher: Springer

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Abstract:

The paper describes a 3mm cryogenic mixer receiver using high doping density (“room-temperature”) Schottky diodes. The measured equivalent noise temperature Teq of the diodes is 109 K at 20 K, which is much higher than the Teq of the low doping density (“cryogenic”) diodes. In spite of this, the double-sideband (DSB) noise temperature of the cryogenic receiver developed is 55 K at 110 GHz, owing to the low conversion loss of the mixer and ultra-low noise of the PHEMT IF amplifier. This is the lowest noise temperature ever reported for a Schottky diode mixer receiver. The results obtained are useful for the development of submm receivers in which high doping density Schottky diodes are used.

Keywords: PHEMT IF amplifier; mixer; receiver; “Room-temperature” Schottky diodes

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s10762-005-7605-6

Affiliations: 1: Institute of Radio Astronomy, Ukrainian Academy of Sciences, 4, Chervonopraporna, St., Kharkiv, 61002, Ukraine, Email: piddyachiy@yandex.ru 2: Institute of Radio Astronomy, Ukrainian Academy of Sciences, 4, Chervonopraporna, St., Kharkiv, 61002, Ukraine,

Publication date: September 1, 2005

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