Design and Fabrication of Silcon Microlens with Low SAG for 528(H) × 528(V) Infrared Charge-Coupled Device Application

Authors: Ke Caijun¹; Yi Xinjian²; Lai Jianjun³; Chen Sihai³

Source: International Journal of Infrared and Millimeter Waves, Volume 26, Number 1, January 2005 , pp. 133-146(14)

Publisher: Springer

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Abstract:

Microlens array is an important optical element to improve the photosensitivity of charge-coupled device (CCD). In this paper, a monolithic integration technology between microlens and 528 × 528 element PtSi Schottky-barrier infrared charge-coupled device (IRCCD) with a pixel size of 30

m × 30

m has been developed. The microlens array with low sag and long focal length is designed based on geometrical optics theory. It is directly formed on the back side of the substrate in IRCCD chip using successive photolithography and A⁺ ion beam etching (IBE) technology. The microlens array is characterized by both surface stylus and point spread function (PSF). The experiment results of integration device between IRCCD and microlens array indicate that the optical signal response is improved obviously and a responsivity increase by a factor of 1.8 in the operation band.

Keywords: silicon microlens; integration; IRCCD; ion-beam-etching; photoresponsivity

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s10762-004-2043-4

Affiliations: 1: Department of Optoelectronic Engineering, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, 430074, Wuhan, People’s Republic of China, Email: caijunke@yahoo.com 2: The State Key Laboratory for Image Processing and Intelligent Control, HUST, 1037 Luoyu Road, 430074, Wuhan, People’s Republic of China, 3: Department of Optoelectronic Engineering, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, 430074, Wuhan, People’s Republic of China,

Publication date: 2005-01-01