Recent Progress in Mid- and Far-Infrared Semiconductor Detectors
Author: Shen, W.Z.
Source: International Journal of Infrared and Millimeter Waves, Volume 21, Number 11, November 2000 , pp. 1739-1746(8)
Abstract:The recent developments of semiconductor infrared detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photoemission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBS), and Si and GaAs homojunction interfacial work-function internal photo-emission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potential limitations of these infrared detectors have also been discussed.
Document Type: Regular Paper
Affiliations: Department of Applied Physics, Shanghai Jiao Tong University, 1954 Hua Shun Road, Shanghai 200030, China. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083, China
Publication date: 2000-11-01