Modeling MESFET's for Nonlinear Analog Circuits
Source: Analog Integrated Circuits and Signal Processing, Volume 33, Number 2, November 2002 , pp. 95-106(12)
This paper presents a new large-signal nonlinear model for the GaAs MESFET linear and saturation zones, tailored for simulating nonlinear analog circuits, operating in any of these regions. In particular a better description of the so-called “linear” zone is given as compared with previous published models.
This new model is validated by comparing its results to the ones obtained with the traditionally used model format, and to laboratory measurements of a general purpose microwave MESFET.
Document Type: Research Article
Affiliations: 1: Instituto de Telecomunicações, Universidade de Aveiro, 3810-193 Aveiro, Portugal firstname.lastname@example.org 2: Instituto de Telecomunicações, Universidade de Aveiro, 3810-193 Aveiro, Portugal email@example.com
Publication date: November 1, 2002