A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits
Authors: Jen S.H.1; Enz C.2; pehlke D.R.3; Schro¨ter M.4; Sheu B.J.4
Source: Analog Integrated Circuits and Signal Processing, Volume 23, Number 2, May 2000 , pp. 93-101(9)
Publisher: Springer
- Free Content
- New Content
- Subscribed Content
- Free Trial Content
Abstract:
Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be adequate up to 10 GHz for MOS transistors fabricated by a 20 GHz cutoff frequency technology. The extrinsic components and substrate coupling effects are properly included. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. A low-noise amplifier is used to illustrate the effects on circuit performance due to accurate inclusion of extrinsic components in the model. Good agreement between simulated results and measured data on high-frequency transistor characteristics has been achieved.
Language: English
Document Type: Regular paper
Affiliations: 1: IC-Media Corporation, Santa Clara, CA 95054, USA 2: Swiss Center for Electronics and Microtechnology (CSEM), Neuchatel, Switzerland 3: Ericsson Research, Triangle Park, NC 27709, USA 4: Avant! Corporation, Fremont, CA 94538, USA
- Free Content
- New Content
- Subscribed Content
- Free Trial Content
Click here for Page Help