Inkjet Printing of Isolation Layers for Back-Contacted Silicon-Heterojunction Solar Cells

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Abstract:

For wafer based silicon solar cells, the combination of amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction emitters (SHJ) [1] and back-contacted back-junction solar cell concepts (BCBJ) [2] offer a very high efficiency potential of around 24%. Stangl et al. proposed a relatively simple and therefore attractive cell concept comprising a two level metallization isolated by an insulation layer. The emitter layer consisting of doped amorphous silicon with a thickness of several nm and the emitter metallization layer comprise circular openings where the back surface field layers and the respective metallization establish contact to the absorber.

In this work the potential of inkjet printing for the deposition of the isolation layer with photoresists or other polymeric fluids is evaluated. Challenges are the required placement precision and the feature size. In order to produce circular openings of the order 10 μm, the drop formation has to be optimized, and the ink spreading on both surfaces - on the aluminum emitter and on the silicon wafer substrate - have to be controlled.

Document Type: Research Article

Publication date: January 1, 2011

More about this publication?
  • For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.

    Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.
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