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A Novel Chemically Amplified Positive Photoresist for UV Lithography

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A novel chemically amplified positive i-line photoresists can be formed by 2,3,4-tris[2-diazo-1-(2H)-naphthalenone-4-sulfonyloxy] benzophenone (2,1,4-DNQ) and an acidolytic acetal polymer. When irradiated with i-line light, the 2,1,4-DNQ sulfonate undergo photolysis not only to give off nitrogen gas but also generate sulfonic acid which can result in the decomposition of the acidolytic polymer. The lithographic performance of the resist materials is evaluated and significant advantages (higher resolution and sensitivity) over conventional novolak/diazonaphthoquinone (DNQ) resist system can be observed.

Document Type: Research Article

Publication date: 2011-01-01

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  • For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.

    Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.

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