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Printable Indium Oxide Thin-Film Transistor

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Recently, the oxide semiconductor, which is possible to substitute for Si-based devices, has been studied for their advantages such as transparent, high carrier mobility and low cost. In many processes it was reported to make the oxide semiconductor. Besides, we tried the solution process for high productivity and used In2O3 to active layer of TFTs by sol-gel reaction. As a result, we obtained the advantages i.e. efficiency of the productivity, processing time and low cost. The performance of TFTs by solution process shows 0.02 cm2/Vs field effect mobility and 106 Ion/Ioff ratio.

Document Type: Research Article

Publication date: January 1, 2010

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  • For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.

    Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.

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