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Printable Indium Oxide Thin-Film Transistor

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Recently, the oxide semiconductor, which is possible to substitute for Si-based devices, has been studied for their advantages such as transparent, high carrier mobility and low cost. In many processes it was reported to make the oxide semiconductor. Besides, we tried the solution process for high productivity and used In2O3 to active layer of TFTs by sol-gel reaction. As a result, we obtained the advantages i.e. efficiency of the productivity, processing time and low cost. The performance of TFTs by solution process shows 0.02 cm2/Vs field effect mobility and 106 Ion/Ioff ratio.
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Document Type: Research Article

Publication date: 2010-01-01

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  • For more than 30 years, IS&T's series of digital printing conferences have been the leading forum for discussion of advances and new directions in 2D and 3D printing technologies. A comprehensive, industry-wide conference that brings together industry and academia, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems?particularly those involved with additive manufacturing and fabrication?including bio-printing, printed electronics, page-wide, drop-on-demand, desktop and continuous ink jet, toner-based systems, and production digital printing, as well as the engineering capability, optimization, and science involved in these fields. In 2016, the conference changed its name formally to Printing for Fabrication to better reflect the content of the meeting and the evolving technology of printing.

    Please note: For purposes of its Digital Library content, IS&T defines Open Access as papers that will be downloadable in their entirety for free in perpetuity. Copyright restrictions on papers vary; see individual paper for details.

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