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Inkjet Method for Direct Patterned Etching of Silicon Dioxide

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An inkjet printing method for the direct patterned etching of silicon dioxide is described. The method uses an inkjet device to deposit a pattern of a solution containing an inactive etching component onto a water soluble surface layer formed over the silicon dioxide. The inactive component reacts with the surface layer, where it contacts, to form an active etchant which etches the silicon dioxide under the surface layer to form a pattern of openings. The method has been successfully used to etch a frontcontact finger and busbar pattern in a silicon dioxide antireflection layer of a silicon solar cell.
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Document Type: Research Article

Publication date: 2008-01-01

More about this publication?
  • For more than 30 years, IS&T's series of digital printing conferences have been the leading forum for discussion of advances and new directions in 2D and 3D printing technologies. A comprehensive, industry-wide conference that brings together industry and academia, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems?particularly those involved with additive manufacturing and fabrication?including bio-printing, printed electronics, page-wide, drop-on-demand, desktop and continuous ink jet, toner-based systems, and production digital printing, as well as the engineering capability, optimization, and science involved in these fields. In 2016, the conference changed its name formally to Printing for Fabrication to better reflect the content of the meeting and the evolving technology of printing.

    Please note: For purposes of its Digital Library content, IS&T defines Open Access as papers that will be downloadable in their entirety for free in perpetuity. Copyright restrictions on papers vary; see individual paper for details.

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