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Inkjet Method for Direct Patterned Etching of Silicon Dioxide

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An inkjet printing method for the direct patterned etching of silicon dioxide is described. The method uses an inkjet device to deposit a pattern of a solution containing an inactive etching component onto a water soluble surface layer formed over the silicon dioxide. The inactive component reacts with the surface layer, where it contacts, to form an active etchant which etches the silicon dioxide under the surface layer to form a pattern of openings. The method has been successfully used to etch a frontcontact finger and busbar pattern in a silicon dioxide antireflection layer of a silicon solar cell.

Document Type: Research Article

Publication date: January 1, 2008

More about this publication?
  • For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.

    Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.

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