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A General and Low-Cost Route to Printable High-Mobility Inorganic Thin Film Transistors

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We have developed a general and low-cost process to fabricate high mobility metal oxide semiconductors that is suitable for thin film electronics. This process uses simple metal halide precursors dissolved in an organic solvent and is capable of forming uniform and continuous thin films via digital fabrication (e.g. inkjet printing). This process has been demonstrated to deposit a variety of semiconducting metal oxides including binary oxides (ZnO, In2O3, SnO), ternary oxides (ZIO, ITO, ZTO) and quaternary compound IZTO. Functional thin film transistors with high field-effect mobility were fabricated successfully using channel layers deposited from this process (μFE ≅ 12 cm2/V-sec from inkjet printed IZTO channel layer). This novel synthetic pathway opens an avenue to form patterned metal oxide semiconductors through a simple and low-cost process for fabricating high performance inorganic thin film electronics via digital fabrication processes.
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Document Type: Research Article

Publication date: 2006-01-01

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  • For more than 30 years, IS&T's series of digital printing conferences have been the leading forum for discussion of advances and new directions in 2D and 3D printing technologies. A comprehensive, industry-wide conference that brings together industry and academia, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems?particularly those involved with additive manufacturing and fabrication?including bio-printing, printed electronics, page-wide, drop-on-demand, desktop and continuous ink jet, toner-based systems, and production digital printing, as well as the engineering capability, optimization, and science involved in these fields. In 2016, the conference changed its name formally to Printing for Fabrication to better reflect the content of the meeting and the evolving technology of printing.

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