High Performance Nanomaterial-based Inorganic Printed Semiconductor
Abstract:The opportunity to deliver unprecedented material and device performance by utilizing unique properties of nanomaterials has generated tremendous interest in both the academia and the industries. In this work, we demonstrate the successful synthesis and printing of quasi-two and three-dimensional (D) inorganic oxide semiconductors with controlled morphologies on a number of device substrates via an environmentally-benign process. Compared to previously reported data of similar nature, a high Hall-effect mobility (∼ 50cm2V−1s−1) is obtained with our nanomaterial-based inorganic printed semiconductor. Using these nanomaterials, a rapid printing process has been developed to strategically pattern features in the millimeter to submicrometer length scale regimes. We show also the seamless integration of these nanomaterials to obtain high performance electronic devices, for example thin-film field-effect transistors (TFTs) with the printed semiconductor as the active channels. Excellent device performances with high field-effect mobilities, μ eff > 20cm2V−1s−1, and respectably high drain current on-to-off ratios, I ON/OFF > 104, are obtained with our TFTs.
Document Type: Research Article
Publication date: January 1, 2005
For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.
Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.
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