Nanoscale Patterning of Organic and Metallic Features on Semiconductors via Self-Assembly of Soft Materials
Abstract:Nanostructured materials continue to be the focus of intense research due to their promise of innumerable practical applications as well as advancing the fundamental understanding of these intriguing materials. In particular, the need for metallic and organic features of increasingly smaller size regimes has imposed stringent demands upon chemists to produce a variety of highly functional materials with reduced dimensions. The successful realization of arrayed nanosensor and nanoelectrode production, molecular electronics, ultra large scale integration (ULSI) device fabrication, and nanoelectromechanical systems (NEMS) will require unparalleled precision and control of geometry, aspect ratio, surface morphology, deposition rate, and substrate adhesion without sacrificing throughput or cost effectiveness. While much effort has been expended towards the synthesis of nanoscale structures, one of the most challenging aspects for the nanoscale materials community is the question of how to ‘wire in’ these functional elements with the real world. In this talk, we will describe recent work towards the interfacing of nanoscale patterns of organic molecular and metallic structures with semiconductor surfaces such as silicon, germanium, gallium arsenide and indium phosphide. We have developed a repertoire of chemical reactivities on semiconductor interfaces, and are now patterning them through straightforward and efficient, highly parallel patterning strategies via self-assembly of soft polymer materials. The self-assembled materials direct transport of reagents to the semiconductor so that the reaction takes place in a spatially defined manner, with precise control over the quantity of reagent delivered. Even mixtures of reagents can be ‘sorted out’ by these interfaces to produce nanoscale (∼10 nm) domains of different chemical functionalities, simultaneously. We will describe these and related approaches towards precise patterning of semiconductor surfaces, entirely via wet-chemical processes that are compatible with existing fabrication strategies.
Document Type: Research Article
Publication date: January 1, 2005
For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.
Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.
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