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Jet-printed Lithography for Semiconductor Device Fabrication

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Phase-change wax-based printed masks, in place of conventional photoresist masks, were used to fabricate a-Si:H thin-film transistors (TFTs). Printed wax-mask features with a minimum feature size of ∼20 μm were achieved using an acoustic-ink-printing process. Both discrete and matrix addressing structured bottom-gate TFTs with sourcedrain contacts overlapping the channel were created using a four-mask process. The TFTs had I-V characteristics comparable to photolithographically patterned devices, with mobility of 0.6-1 cm2/V·s, threshold voltage of 2-3 V, and on/off ratios exceeding 107 for devices with channel lengths below 50μm. The wax-mask process was also used to fabricate self-aligned TFT devices, eliminating the sourcedrain contact overlap constraint.

Document Type: Research Article

Publication date: 2002-01-01

More about this publication?
  • For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.

    Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.

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