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Electric Field Calculation Based on PIDC in Monocomponent Development Systems

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Conventionally, electric fields in a development nip are often calculated for well-defined patterns (solid areas and isolated lines) or for a given charge distribution on the photoconductor surface. We propose an alternative method for field calculation based on various physical parameters of the development system. It uses a set of laser and photoconductor parameters to compute the exposure energy on the photoconductor surface, and the corresponding photoconductor surface potential is obtained from the Photo-Induced Discharge Characteristics (PIDC) of the photoconductor. The surface potential is then used as a boundary condition for solving Poisson's equation. The normal and horizontal fields are subsequently obtained by taking the negative gradient of the voltage. This method accounts for what is commonly known as dot-overlapping. Thus, electric fields anywhere in the gap for an arbitrary input bitmap can be calculated. Using our field model, simulation results from various input patterns are presented.

Document Type: Research Article

Publication date: January 1, 2002

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  • For more than 25 years, NIP has been the leading forum for discussion of advances and new directions in non-impact and digital printing technologies. A comprehensive, industry-wide conference, this meeting includes all aspects of the hardware, materials, software, images, and applications associated with digital printing systems, including drop-on-demand ink jet, wide format ink jet, desktop and continuous ink jet, toner-based electrophotographic printers, production digital printing systems, and thermal printing systems, as well as the engineering capability, optimization, and science involved in these fields.

    Since 2005, NIP has been held in conjunction with the Digital Fabrication Conference.

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