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Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

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Abstract:

We argue that in cuprate physics there are two types, hole content per CuO2 plane (Ppl) and the corresponding hole content per unit volume (P3D), of hole-doping concentrations for addressing physical properties that are two dimensional (2D) and three dimensional (3D) in nature, respectively. We find that the superconducting transition temperature (Tc) varies systematically with P3D as a superconducting 'dome' with a universal optimal hole-doping concentration of P3Dopt = 1.6 × 1021 cm-3 for single-layer high-temperature superconductors. We suggest that P3Dopt determines the upper bound of the electronic energy of underdoped single-layer high-Tc cuprates.

Document Type: Research Article

DOI: http://dx.doi.org/10.1088/0953-2048/19/9/004

Publication date: September 1, 2006

iop/sust/2006/00000019/00000009/art00004
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