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Transport properties of pulsed laser deposition grown Dy0.4Ho0.6Ba2Cu3Oz thin films

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Pulsed laser deposition (PLD) grown Dy0.4Ho0.6Ba2Cu3Oz [(D, H)BCO] superconducting films on LaAlO3 substrates have been studied for their critical current density (Jc) and microwave surface resistance (Rs) in comparison with YBCO films. It is inferred that the best films (grown at 800 °C) with transition temperature (Tc) 92 K showed a higher Jc value above 80 K compared to that of YBCO films. Also, at 77 K, the field dependent Jc value of (D, H)BCO films (5 kA cm-2 at 8 T) is 2.5 times higher than that of YBCO films (2 kA cm-2 at 8 T). The best (D, H)BCO films showed lower Rs in the liquid nitrogen (N2) temperature region (4.2 m Ω at 77 K) than YBCO films (7.65 m Ω at 77 K) while in the low temperature region (below 60 K) YBCO films exhibit better microwave performance irrespective of their deposition temperature. These significantly improved values (both the Jc as well as the Rs values above 77 K) reveal that a rare earth (RE) mixed 123 thin film is a rather better candidate than YBCO thin film for use in fabricating microwave passive devices operating at high fields and at liquid N2 temperature.

Document Type: Research Article


Publication date: July 1, 2004


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