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Substitution-induced pinning in MgB2 superconductor doped with SiC nano-particles

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By doping MgB2 superconductor with SiC nano-particles, we have successfully introduced pinning sites directly into the crystal lattice of MgB2 grains (intra-grain pinning). It became possible due to the combination of counter-balanced Si and C co-substitution for B, leading to a large number of intra-granular dislocations and the dispersed nano-size impurities induced by the substitution. The magnetic field dependence of the critical current density was significantly improved in a wide temperature range, whereas the transition temperature in the sample MgB2(SiC)x having x 0.34, the highest doping level prepared, dropped only by 2.6 K.

Document Type: Miscellaneous

Affiliations: 1: Institute for Superconducting and Electronic Materials, University of Wollongong, Northfields Avenue, Wollongong, NSW 2522, Australia 2: Electron Microscopy Unit, University of New South Wales, Sydney, NSW 2052, Australia

Publication date: November 1, 2002

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