If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Epitaxial growth of YBa2Cu3O7/CeO2/YSZ thin films on silicon-on-insulator substrates

$47.81 plus tax (Refund Policy)

Buy Article:


A silicon-on-insulator (SOI) substrate is a compliant type of substrate because it is possible to grow a wide variety of materials on it with a small lattice mismatch and a small thermal expansion mismatch. It is quite promising in microelectronics applications, such as hybrid semiconductor/superconductor devices. In this paper, a SOI substrate has been used to grow a superconducting thin film. Using in situ pulsed laser deposition, epitaxial YBaCuO (>4000 Å) thin films have been grown on SOI (100) substrates via a multiple buffer layer of CeO2 and yttrium-stabilized zirconium oxide (YSZ). X-ray diffraction analyses have shown that both the YBaCuO films and the multiple buffer layers are c-axis orientated. We have obtained YBa2Cu3O7/CeO2/YSZ multilayers with a critical temperature, Tc, of 88 K and a critical current density, Jc, of 2 × 106 A cm-2 at 77 K.

Document Type: Miscellaneous

Publication date: January 1, 2002

Related content



Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more