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Microstructure, magnetization and dc transport properties of MTG-YBa [iopmath latex="$_{1.8}$"] 1.8 [/iopmath] Na [iopmath latex="$_{0.2}$"] 0.2 [/iopmath] Cu3O [iopmath latex="$_y$"] y [/iopmath] crystal

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Abstract:

The Na-doping MTG-YBCO crystal with the nominal composition YBa [iopmath latex="$_{1.8}$"] 1.8 [/iopmath] Na [iopmath latex="$_{0.2}$"] 0.2 [/iopmath] Cu3O [iopmath latex="$_y +40$"] y + 40 [/iopmath]  mol% Y211 has been successfully synthesized by the melted-textured-growth (MTG) method with top seed. The microstructure photographs show that the crystal has a good layered structure with a number of twins. There is a second peak in the magnetization curve for the magnetic field parallel to the c-axis and at 77 K. The field of zero resistance temperature [iopmath latex="$T_{c0}$"] Tc0 [/iopmath] shows a power law, [iopmath latex="$H=H_0$"] H = H0 [/iopmath] ( [iopmath latex="$T_{c0}(0)-T_{c0}(H))^n$"] Tc0(0)-Tc0(H))n [/iopmath] with [iopmath latex="$n=1.52$"] n = 1.52 [/iopmath] for [iopmath latex="$H\parallel ab$"] Hab [/iopmath] and [iopmath latex="$n=1.41$"] n = 1.41 [/iopmath] for [iopmath latex="$H\parallel c$"] Hc [/iopmath] , respectively. The thermally activated flux creep model can scale the dissipative resistivity below the peak temperature [iopmath latex="$T_p$"] Tp [/iopmath] . The temperature and field dependences of the effective activation energy can be described by the formula [iopmath latex="$U=U_0(1-T/T_p)^mH^{-\alpha }$"] U = U0(1-T/Tp)mH- [/iopmath] , where [iopmath latex="$m=1.75$"] m = 1.75 [/iopmath] , [iopmath latex="$\alpha =0.75$"] = 0.75 [/iopmath] for [iopmath latex="$H\parallel ab$"] Hab [/iopmath] and [iopmath latex="$m=2.5$"] m = 2.5 [/iopmath] , [iopmath latex="$\alpha =1.52$"] = 1.52 [/iopmath] for [iopmath latex="$H\parallel c$"] Hc [/iopmath] , respectively. The effect of Na-doping induced disorder on flux pinning has been discussed.

Document Type: Miscellaneous

Affiliations: 1: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China 2: Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China 3: High Magnetic Field Laboratory, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 23031, People's Republic of China

Publication date: January 1, 2001

iop/sust/2001/00000014/00000007/art00314
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