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Dependences of the chemical potential shift and superconducting transition temperature on the hole concentration in La2-xSrxCuO4 and Bi2Sr2Ca1-xYxCu2O8+

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Dependences of the superconducting transition temperature (Tc) on the hole concentration (nh) in La2-xSrxCuO4and Bi2Sr2Ca1-xYxCu2O8+have been calculated using the interband model. The phase space for pair-transfer scattering between the overlapping bands is governed by the position of the chemical potential. Downward shifts () of the electron chemical potential () with nhhave been found. The slope is /nh8 eV/hole in under-doped Bi2Sr2Ca1-xYxCu2O8+and it becomes smaller in optimally-doped and over-doped samples (~1.2 eV/hole). In La2-xSrxCuO4/nhis equal to 1.25 eV/hole in over-doped samples and ~0.4 eV/hole in under-doped samples at T= 80 K. The pseudogap leads to the suppression of (nh) up to nh0.17 holes per CuO2plane at T= 80 K. The shift of the chemical potential  leads to the curve Tc(nh) with a maximum. The dependences (nh) and Tc(nh) for the systems considered agree with the experimental data.

Document Type: Miscellaneous

Publication date: March 1, 2000


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