Liquid-phase epitaxy processing of RBa2Cu3O7-

Author: Yamada, Y.

Source: Superconductor Science and Technology, Volume 13, Number 1, 2000 , pp. 82-87(6)

Publisher: IOP Publishing

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The study of processing by liquid-phase epitaxy (LPE) is promising because the LPE process can provide rapid and thick film formation of RBa2Cu3O7-(RBCO). The growth rate can reach 10 m min-1and films of more than 5 m in thickness formed by the LPE process show a high critical current density of about 1 MA cm-2. To apply this process widely, a decrease of the processing temperature is required because it gives rise to a reaction between the solution and many of the substrate materials. Film formation on yttria-stabilized ZrO2and silver substrates, which are more reactive than other materials such as MgO or SrTiO3, has been achieved by decreasing the temperature to below 920 °C, with the addition of BaF2in the solution. This paper describes processing by LPE for forming RBCO films and efforts for practical application towards coated conductors and RF electronic devices.

Document Type: Miscellaneous

Publication date: January 1, 2000

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