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Patterning of tunable planar ferroelectric capacitors based on the YBCO/BSTO film structure

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Abstract:

Superconductor/ferroelectric (SF) and normal conducting metal/ferroelectric (NF) film structures were grown using DC and RF magnetron sputtering of ceramic and targets. Low-energy ion beam etching was used for patterning an SF planar capacitor with an electrode gap of about . Ferroelectric films displayed a rather smooth temperature dependence of with a maximal value of about 850 at K . Planar ferroelectric capacitors were intended for application in microwave tunable devices, so structures without hysteresis in voltage-capacitance characteristics were demanded. The SF and NF structures demonstrated a high enough coefficient of capacitance tuning (more than 1.5) and lower hysteresis for structures with YBCO electrodes.

Document Type: Miscellaneous

Affiliations: 1: St Petersburg Electrotechnical University, 197376 St Petersburg, Russia 2: Institute of Electronics, Bulgarian Academy of Sciences, 1784, Sofia, Bulgaria 3: Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St Petersburg 194021, Russia

Publication date: March 1, 1998

iop/sust/1998/00000011/00000003/art00006
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