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Low-temperature growth of by pulsed laser deposition

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Abstract:

We prepared superconducting films at lower temperatures by a pulsed laser deposition method. The growth temperature usually decreased with decreasing oxygen pressure in the deposition chamber. However, the superconducting critical temperature of the films deposited at a low oxygen pressure was drastically degraded because of insufficient oxidation. In this work, we employed a mixed gas consisting of oxygen and ozone as the oxidation gas. As a result, increased to 86 K, when films were deposited in a low-pressure oxygen atmosphere (5 mTorr) mixed with ozone (5 mol%) and at a low laser fluence of . In addition to superconducting properties, the surface morphology could be improved by using low-pressure oxygen gas mixed with ozone and by optimizing the laser fluence.

Document Type: Miscellaneous

Publication date: March 1, 1998

iop/sust/1998/00000011/00000003/art00002
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