Semiconductor Science and Technology

Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers
pp. 32001-32004(4)
Authors: Vizbaras, Kristijonas; Amann, Markus-Christian

AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation
pp. 32002-32006(5)
Authors: Schneider, C.; Kremling, S.; Tarakina, N.V.; Braun, T.; Adams, M.; Lermer, M.; Reitzenstein, S.; Worschech, L.; Kamp, M.; Höfling, S.; Forchel, A.

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
pp. 35001-35004(4)
Authors: Izhnin, I.I.; Izhnin, A.I.; Savytskyy, H.V.; Vakiv, M.M.; Stakhira, Y.M.; Fitsych, O.E.; Yakushev, M.V.; Sorochkin, A.V.; Sabinina, I.V.; Dvoretsky, S.A.; Sidorov, Yu G.; Varavin, V.S.; Pociask-Bialy, M.; Mynbaev, K.D.

Patterned gold-assisted growth of GaP nanowires on Si
pp. 35002-35007(6)
Authors: Boulanger, J.P.; LaPierre, R.R.

The diffusivity of the Cd interstitial in CdTe
pp. 35003-35007(5)
Author: Shaw, D.

A model of the turn-on spread in an optically triggered SiC thyristors
pp. 35004-35008(5)
Authors: Yuferev, V.S.; Levinshtein, M.E.; Palmour, J.W.

Improvement in performance and reliability with CF₄ plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor
pp. 35005-35010(6)
Authors: Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

LDMOS-SCR: a replacement for LDMOS with high ESD self-protection ability for HV application
pp. 35006-35010(5)
Authors: Zhang, Peng; Wang, Yuan; Jia, Song; Zhang, Xing

Fabrication of SnS thin films by a novel multilayer-based solid-state reaction method
pp. 35007-35011(5)
Authors: Xu, Zhan; Chen, Yigang

Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
pp. 35008-35012(5)
Authors: Zheng, C.C.; Xu, S.J.; Ning, J.Q.; Bao, W.; Wang, J.F.; Gao, J.; Liu, J.M.; Zhu, J.H.; Liu, X.L.

The effect of gate length variation on InAlGaN/GaN HFET device characteristics
pp. 35009-35012(4)
Authors: Ketteniss, N.; Behmenburg, H.; Lecourt, F.; Defrance, N.; Hoel, V.; De Jaeger, J.C.; Heuken, M.; Kalisch, H.; Vescan, A.

Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth method
pp. 35010-35015(6)
Authors: Kim, Hogyoung; Sohn, Ahrum; Kim, Dong-Wook

Monopolar photoelectromagnetic effect in Pb_1−xSn_xTe(In) under terahertz laser radiation
pp. 35011-35014(4)
Authors: Chernichkin, V.I.; Ryabova, L.I.; Nicorici, A.V.; Khokhlov, D.R.

Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films
pp. 35012-35016(5)
Authors: Jin, J.; Zhang, X.Y.; Zhou, Y.X.; Chang, G.S.

Calculation of the internal electric field within doped semiconductors
pp. 35013-35018(6)
Author: Phelps, G.J.

Barrier height and interface characteristics of Au/Mn₅Ge₃/Ge (1 1 1) Schottky contacts for spin injection
pp. 35014-35020(7)
Authors: Sellai, A.; Mesli, A.; Petit, M.; Thanh, V Le; Taylor, D.; Henini, M.

Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy
pp. 35015-35018(4)
Authors: Takagaki, Y.; Jenichen, B.

Characterization of a-FeSi₂/c-Si heterojunctions for photovoltaic applications
pp. 35016-35020(5)
Authors: Antwis, L.; Gwilliam, R.; Smith, A.; Homewood, K.; Jeynes, C.

Synthesis and characterization of Cd_1−xCo_xS thin films prepared using the spray pyrolysis technique
pp. 35017-35022(6)
Authors: Kamruzzaman, M.; Luna, T.R.; Podder, Jiban; Anowar, M.G.M.

Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis
pp. 35018-35022(5)
Authors: Lim, Taekyung; Lee, Sumi; Meyyappan, M.; Ju, Sanghyun

A TCAD-based modeling of GaN/InGaN/Si solar cells
pp. 35019-35027(9)
Authors: Nawaz, Muhammad; Ahmad, Ashfaq

Low interface trapped charge density in MBE in situ grown Si₃N₄ cubic GaN MIS structures
pp. 35020-35026(7)
Authors: Zado, A.; Gerlach, J.; As, D.J.

Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts
pp. 35021-35025(5)
Authors: Kulbachinskii, V.A.; Yuzeeva, N.A.; Galiev, G.B.; Klimov, E.A.; Vasil'evskii, I.S.; Khabibullin, R.A.; Ponomarev, D.S.

Structure, morphology and properties of thinned Cu(In, Ga)Se₂ films and solar cells
pp. 35022-35029(8)
Authors: Han, Anjun; Zhang, Yi; Song, Wei; Li, Boyan; Liu, Wei; Sun, Yun

Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy
pp. 35023-35029(7)
Authors: Pang, Jin-Biao; Leipner, Hartmut S.; Krause-Rehberg, Reinhard; Wang, Zhu; Zhou, Kai; Li, Hui

On impedance spectroscopy analysis of nonideal heterojunctions
pp. 35024-35030(7)
Author: Brus, V.V.

Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi-Dirac statistics
pp. 39501-39501(1)
Authors: Islam, A.; Kalna, K.