Semiconductor Science and Technology

A simple new way to prepare anatase TiO₂ hydrosol with high photocatalytic activity
pp. L36-L39(4)
Authors: Wang, Jing-yu; Yu, Jun-xia; Liu, Zhi-hong; He, Zhi-ke; Cai, Ru-xiu

1/f noise and dye-sensitized solar cells
pp. L40-L42(3)
Authors: Jayaweera, P.V.V.; Pitigala, P.K.D.D.P.; Perera, A.G.U.; Tennakone, K.

Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation
pp. L31-L35(5)
Authors: Di, Zengfeng; Zhang, Miao; Liu, Weili; Luo, Suhua; Song, Zhitang; Lin, Chenglu; Lin, Qing; Chu, Paul K.

Low-intensity ultraviolet light detector using a surface acoustic wave oscillator based on ZnO/LiNbO₃ bilayer structure
pp. L27-L30(4)
Authors: Kumar, Sanjeev; Sreenivas, K.; Sharma, Parmanand

Effect of interfacial resistance and contact size on current crowding at Ni/poly-Si junctions
pp. 659-663(5)
Authors: Liao, Chien-Neng; Chen, Kuan-Chia

Electron effective mass in ultrathin oxide silicon MOSFET inversion layers
pp. 664-667(4)
Authors: Dragosavac, M.; Paul, D.J.; Pepper, M.; Fowler, A.B.; Buchanan, D.A.

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers
pp. 668-672(5)
Authors: O'Connor, Robert; McDonnell, Stephen; Hughes, Greg; Degraeve, Robin; Kauerauf, Thomas

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect
pp. 673-676(4)
Authors: Tang, Y.T.; Cerrina, C.; Waite, A.M.; Afshar-Hanaee, N.; Evans, A.G.R.; Grasby, T.J.; Parker, E.H.C.; Whall, T.E.; Norris, D.J.; Chang, A.C.K.; Cullis, A.G.

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications
pp. 677-684(8)
Authors: Mun, JaeKyoung; Ji, HongGu; Ahn, Hyokyun; Kim, Haecheon; Park, Chong-Ook

Post-growth treatment effects on properties of CuInS₂ thin films deposited by RF reactive sputtering
pp. 685-692(8)
Authors: He, Y.B.; Krämer, T.; Österreicher, I.; Polity, A.; Meyer, B.K.; Hardt, M.

PEB bake optimization for process window improvement of mixed iso-dense pattern
pp. 693-698(6)
Authors: Liau, C.Y.; Lee, C.H.; Kang, J.T.; Yoon, S.W.; Loo, Christopher; Seow, Bertrand; Sheu, W.B.

Non-empirical prediction of solar cell degradation in space
pp. 699-704(6)
Authors: Makham, S.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.

Nanocrystalline haematite thin films by chemical solution spray
pp. 705-709(5)
Authors: Desai, J.D.; Pathan, H.M.; Min, Sun-Ki; Jung, Kwang-Deog; Joo, Oh-Shim

Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors
pp. 710-715(6)
Authors: Blank, T.V.; Goldberg, Yu A.; Kalinina, E.V.; Konstantinov, O.V.; Konstantinov, A.O.; Hallén, A.

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation
pp. 716-719(4)
Authors: Jiang, Yu-Long; Ru, Guo-Ping; Huang, Wei; Qu, Xin-Ping; Li, Bing-Zong; Agarwal, Aditya; Cai, Gary; Poate, John; Detavernier, Christophe; Van Meirhaeghe, R.L.

Progress in semiconducting oxide-based thin-film transistors for displays
pp. 720-725(6)
Authors: Li, Y.J.; Kwon, Y.W.; Jones, M.; Heo, Y.W.; Zhou, J.; Luo, S.C.; Holloway, P.H.; Douglas, E.; Norton, D.P.; Park, Z.; Li, S.

Conversion of conductivity type in Cu-doped Hg_0.8Cd_0.2Te crystals under ion beam milling
pp. 726-732(7)
Authors: Bogoboyashchyy, V.V.; Elizarov, A.I.; Izhnin, I.I.

Hole spin relaxation: optical deformation potential scattering
pp. 733-739(7)
Author: Dargys, A.

C and N co-implantation in Be-doped GaN
pp. 740-744(5)
Authors: Liu, K.T.; Su, Y.K.; Chuang, R.W.; Chang, S.J.; Horikoshi, Y.

Artificial birefringence introduced by porosity in GaP
pp. 745-748(4)
Authors: Ursaki, V.V.; Syrbu, N.N.; Albu, S.; Zalamai, V.V.; Tiginyanu, I.M.; Boyd, Robert W.

Characterization of electrodeposited Zn_1-xHg_xSe thin films
pp. 749-754(6)
Authors: Mahalingam, T.; Kathalingam, A.; Velumani, S.; Lee, Soonil; Kyeung Seek Lew,; Yong Deak Kim,

Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs
pp. 755-760(6)
Authors: Wang, S.H.; Mohney, S.E.; Robinson, J.A.

Organic light-emitting diodes with n-type silicon anode
pp. 761-764(4)
Authors: Ran, G.Z.; Xu, Y.H.; L, G.; Xu, A.G.; Qiao, Y.P.; Chen, W.X.; Qin, G.G.

Dispersive optical constants and temperature-dependent band gap of cadmium-doped indium selenide thin films
pp. 765-769(5)
Author: Qasrawi, A.F.

Relaxed silicon–germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing
pp. 770-774(5)
Authors: Chen, Zhijun; Zhang, Feng; Chen, Jing; Jin, Bo; Wang, Yongjin; Zhang, Changsheng; Zhang, Zhengxuan; Wang, Xi

Structural and optical properties of GaN/AlGaN multiquantum wells with an AlGaN insertion monolayer in the GaN well
pp. 775-778(4)
Authors: Park, Y.S.; Park, C.M.; Lee, S.J.; Im, Hyunsik; Kang, T.W.; Oh, Jae-Eung; Chang Soo Kim,; Sam Kyu Noh,

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output
pp. 779-782(4)
Authors: Hou, Lianping; Wang, Wei; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT
pp. 783-787(5)
Authors: Balakrishnan, V.R.; Kumar, Vikram; Ghosh, Subhasis

Sol–gel derived nanocrystalline titania thin films on silicon
pp. 788-792(5)
Authors: Chaure, N.B.; Ray, A.K.; Capan, R.

dV/dt effect in high-voltage 4H-SiC thyristors
pp. 793-795(3)
Authors: Levinshtein, M.E.; Ivanov, P.A.; Mnatsakanov, T.T.; Yurkov, S.N.; Agarwal, A.K.; Palmour, J.W.

Electrical and structural properties of p-type ZnO:N thin films prepared by plasma enhanced chemical vapour deposition
pp. 796-800(5)
Authors: Xiao, Zhiyan; Liu, Yichun; Zhang, Jiying; Zhao, Dongxu; Lu, Youming; Shen, Dezhen; Fan, Xiwu

The role of MgF₂ buffer layer in tris-(8-hydroxyquinoline)aluminium-based organic light-emitting devices with Mg:Ag cathode
pp. 801-804(4)
Authors: Chen, B.J.; Sun, X.W.

High efficiency polymer electrophosphorescent light-emitting diodes
pp. 805-808(4)
Authors: Gao, Jia; You, Han; Qin, Zhi-Pei; Fang, Junfeng; Dongge,; Zhu, Xuhui; Huang, Wei

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy
pp. 809-813(5)
Authors: Skierbiszewski, C.; Perlin, P.; Grzegory, I.; Wasilewski, Z.R.; Siekacz, M.; Feduniewicz, A.; Wisniewski, P.; Borysiuk, J.; Prystawko, P.; Kamler, G.; Suski, T.; Porowski, S.

Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
pp. 814-818(5)
Authors: Knop, M.; Richter, M.; Maßmann, R.; Wieser, U.; Kunze, U.; Reuter, D.; Riedesel, C.; Wieck, A.D.

Improving the efficiency of CdS/CdTe solar cells by varying the thiourea/CdCl₂ ratio in the CdS chemical bath
pp. 819-822(4)
Authors: Vigil-Galán, O.; Arias-Carbajal, A.; Mendoza-Pérez, R.; Santana-Rodríguez, G.; Sastre-Hernández, J.; Alonso, J.C.; Moreno-García, E.; Contreras-Puente, G.; Morales-Acevedo, A.

The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target
pp. 823-828(6)
Authors: Li, Xifeng; Miao, Weina; Zhang, Qun; Huang, Li; Zhang, Zhuangjian; Hua, Zhongyi

Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well
pp. 829-833(5)
Authors: Lü, J.T.; Cao, J.C.

Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
pp. 834-839(6)
Authors: Yang, H-P D.; Lu, C.; Hsiao, R.; Chiou, C.; Lee, C.; Huang, C.; Yu, H.; Wang, C.; Lin, K.; Maleev, N.A.; Kovsh, A.R.; Sung, C.; Lai, C.; Wang, J.; Chen, J.; Lee, T.; Chi, J.Y.

Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs
pp. 840-843(4)
Authors: Weichsel, C.; Pagni, O.; Leitch, A.W.R.

8 µm strain-compensated quantum cascade laser operating at room temperature
pp. 844-846(3)
Authors: Guo, Yu; Liu, F.Q.; Liu, J.Q.; Li, C.M.; Wang, Z.G.

Deposition and diffusion of a single Si adatom on H-terminated Si (1 0 0) surfaces
pp. 847-850(4)
Authors: Huang, X.J.; Zhu, X.Y.

Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In_0.53Ga_0.47As/In_0.52Al_0.48As multiple quantum wells electroabsorption modulator structure
pp. 851-855(5)
Authors: Yu, J.S.; Song, J.D.; Lee, Y.T.; Lim, H.

Relocation of surface acoustic waves in Al_xGa_1-xN/GaN bilayer films on SiC substrates
pp. 856-859(4)
Authors: Takagaki, Y.; Ploog, K.H.

Ohmic contacts on p-type homoepitaxial diamond and their thermal stability
pp. 860-863(4)
Authors: Chen, Yigang; Ogura, Masahiko; Yamasaki, Satoshi; Okushi, Hideyo

2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices
pp. 864-869(6)
Authors: Tirado, J.M.; Sanchez-Rojas, J.L.; Izpura, J.I.

Dielectric and infrared properties of TiO₂ films containing anatase and rutile
pp. 870-875(6)
Authors: Busani, T.; Devine, R.A.B.

Reversible and non-reversible photo-enhanced luminescence in CdSe/ZnS quantum dots
pp. 876-881(6)
Authors: Korsunska, N.E.; Dybiec, M.; Zhukov, L.; Ostapenko, S.; Zhukov, T.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation
pp. 882-885(4)
Authors: Zhao, Q.; Pan, J.Q.; Zhang, J.; Zhou, G.T.; Wu, J.; Wang, L.F.; Wang, W.

Below bandgap optical absorption in tellurium-doped GaSb
pp. 886-893(8)
Authors: Chandola, A.; Pino, R.; Dutta, P.S.