Magnetic and optical properties of Ga_1-xMn_xN grown by metalorganic chemical vapour deposition

Authors: M.H. Kane; A. Asghar; C.R. Vestal; M. Strassburg; J. Senawiratne; Z.J. Zhang; N. Dietz; C.J. Summers; I.T. Ferguson

Source: Semiconductor Science and Technology, Volume 20, Number 3, March 2005 , pp. L5-L9(1)

Publisher: Institute of Physics Publishing

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Abstract:

Epitaxial layers of Ga_1-xMn_xN with concentrations of up to x = 0.015 have been grown on c-sapphire substrates by metalorganic chemical vapour deposition. No ferromagnetic second phases were detected via high-resolution x-ray diffraction. Crystalline quality and surface structure were measured by x-ray diffraction and atomic force microscopy, respectively. No significant deterioration in crystal quality and no increase in surface roughness with the incorporation of Mn were detected. Optical measurements show a broad emission band attributed to a Mn-related transition at 3.0 eV that is not seen in the underlying GaN virtual substrate layers. Room temperature ferromagnetic hysteresis has been observed in these samples, which may be due to either Mn-clustering on the atomic scale or the Ga_1-xMn_xN bulk alloy.

Document Type: Research article

DOI: 10.1088/0268-1242/20/3/L02

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