Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers

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In this Subject: <a title="Electrical & Nuclear Engineering" href="/content/subcat?j_subject=187&j_availability=">Electrical & Nuclear Engineering ,&nbsp; <a title="Electricity & Magnetism" href="/content/subcat?j_subject=227&j_availability=">Electricity & Magnetism
By this author: Xinli Cheng ;&nbsp; Zhilang Lin ;&nbsp; Yongjin Wang ;&nbsp; Haibo Xiao ;&nbsp; Feng Zhang ;&nbsp; Shichang Zou

Authors: Xinli Cheng; Zhilang Lin; Yongjin Wang; Haibo Xiao; Feng Zhang; Shichang Zou

Source: Semiconductor Science and Technology, Volume 20, Number 3, March 2005 , pp. L1-L4(4)

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Abstract:

SiGe-on-insulator (SGOI) materials were fabricated by thermal oxidation of SiGe layers on SOI wafers. H ions were implanted into a SiGe layer before oxidation and the effects of implantation of H ions during oxidation were studied. The implantation of H ions decreased the oxidation rate of the SiGe layer during oxidation. After thermal oxidation, SGOI materials with a high Ge fraction were obtained. The results show that the implantation of H ions can decrease the loss of Ge in the SiGe layer during oxidation and H ions diffused out of the SiGe layer after oxidation.

Document Type: Research article

DOI: http://dx.doi.org/10.1088/0268-1242/20/3/L01

Publication date: 2005-03-01