Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers

Authors: Xinli Cheng; Zhilang Lin; Yongjin Wang; Haibo Xiao; Feng Zhang; Shichang Zou

Source: Semiconductor Science and Technology, Volume 20, Number 3, March 2005 , pp. L1-L4(1)

Publisher: Institute of Physics Publishing

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Abstract:

SiGe-on-insulator (SGOI) materials were fabricated by thermal oxidation of SiGe layers on SOI wafers. H ions were implanted into a SiGe layer before oxidation and the effects of implantation of H ions during oxidation were studied. The implantation of H ions decreased the oxidation rate of the SiGe layer during oxidation. After thermal oxidation, SGOI materials with a high Ge fraction were obtained. The results show that the implantation of H ions can decrease the loss of Ge in the SiGe layer during oxidation and H ions diffused out of the SiGe layer after oxidation.

Document Type: Research article

DOI: 10.1088/0268-1242/20/3/L01

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